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Электронный компонент: KA5L0380R-YDTU

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2000 Fairchild Semiconductor International
www.fairchildsemi.com
Rev. .5.0
Features
Precision fixed operating frequency (100/67/50kHz)
Low start-up current(typ. 100uA)
Pulse by pulse current limiting
Over current protection
Over voltage protecton (Min. 25V)
Internal thermal shutdown function
Under voltage lockout
Internal high voltage sense FET
Auto-restart mode
Description
The SPS product family is specially designed for an off-line
SMPS with minimal external components. The SPS consist
of high voltage power SenseFET and current mode PWM
IC. Included PWM controller features integrated fixed fre-
quency oscillator, under voltage lock-out, leading edge
blanking, optimized gate turn-on/turn-off driver, thermal
shutdown protection, over voltage protection, and tempera-
ture compensated precision current sources for loopcompen-
sation and fault protection circuitry. Compared to discrete
MOSFET and PWM controller or RCC solution, a SPS can
reduce total component count, design size, weight and at the
same time increase efficiency, productivity, and system reli-
ability. It has a basic platform well suited for cost-effective
design in either a flyback converter or a forward converter.
TO-220F-4L
1. GND 2. DRAIN 3. V
CC
4. FB
Internal Block Diagram
Vcc
Vcc
Vcc
Vcc
FB
FB
FB
FB
DRAIN
GND
GND
GND
GND
SFET
SFET
SFET
SFET
5V
Vref
OSC
INTERNAL
BIAS
GOOD
LOGIC
Q
S
R
_
+
2.5R
1R
9V
1 mA
5 uA
+
_
7.5V
THERMAL S/D
Q
S
R
POWER ON RESET
L.E.B
+
_
27V
UVLO
Rsens
KA5H0380R/KA5M0380R/KA5L0380R
SPS
KA5H0380R/KA5M0380R/KA5L0380R
2
Absolute Maximum Ratings
Notes:
1. Tj=25
C to 150
C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=51mH, starting Tj=25
C
4. L=13
H, starting Tj=25
C
Characteristic
Symbol
Value
Unit
Drain-source (GND) voltage
(1)
VDSS
800
V
Drain-Gate voltage (R
GS
=1M
)
VDGR
800
V
Gate-source (GND) voltage
VGS
30
V
Drain current pulsed
(2)
IDM
12
A
DC
Single pulsed avalanche energy
(3)
EAS
95
mJ
Avalanche current
(4)
IAS
10
A
Continuous drain current (T
C
=25
C)
ID
3.0
A
DC
Continuous drain current (T
C
=100
C)
ID
2.1
A
DC
Supply voltage
VCC
30
V
Analog input voltage range
VFB
-
0.3 to V
SD
V
Total power dissipation
PD (watt H/S)
35
W
Derating
0.28
W/
C
Operating temperature
TOPR
-
25 to +85
C
Storage temperature
TSTG
-
55 to +150
C
KA5H0380R/KA5M0380R/KA5L0380R
3
Electrical Characteristics (SFET part)
(Ta = 25
C unless otherwise specified)
Note:
Pulse test: Pulse width < 300
S, duty < 2%
Characteristic
Symbol
Test condition
Min.
Typ.
Max.
Unit
Drain-source breakdown voltage
BV
DSS
V
GS
=0V, I
D
=50
A
800
-
-
V
Zero gate voltage drain current
I
DSS
V
DS
=Max., Rating,
V
GS
=0V
-
-
250
A
V
DS
=0.8Max., Rating,
V
GS
=0V, T
C
=125
C
-
-
1000
A
Static drain-source on resistance
(note)
R
DS(ON)
V
GS
=10V, I
D
=0.5A
-
4
5
Forward transconductance
(note)
g
fs
V
DS
=50V, I
D
=0.5A
1.5
2.5
-
S
Input capacitance
C
iss
V
GS
=0V, V
DS
=25V,
f=1MHz
-
779
-
pF
Output capacitance
C
oss
-
75.6
-
Reverse transfer capacitance
C
rss
-
24.9
-
Turn on delay time
t
d(on)
V
DD
=0.5BV
DSS
, I
D
=1.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
-
40
-
nS
Rise time
t
r
-
95
-
Turn off delay time
t
d(off)
-
150
-
Fall time
t
f
-
60
-
Total gate charge
(gate-source+gate-drain)
Q
g
V
GS
=10V, I
D
=1.0A,
V
DS
=0.5BV
DSS
(MOSFET
switching time are
essentially independent of
operating temperature)
-
-
34
nC
Gate-source charge
Q
gs
-
7.2
-
Gate-drain (Miller) charge
Q
gd
-
12.1
-
S
1
R
----
=
KA5H0380R/KA5M0380R/KA5L0380R
4
Electrical Charcteristics (SFET part) (Continued)
(Ta = 25
C unless otherwise specified)
NOTE:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS(water test) process
Characteristic
Symbol
Test condition
Min.
Typ.
Max.
Unit
REFERENCE SECTION
Output voltage
(1)
Vref
Ta=25
C
4.80
5.00
5.20
V
Temperature Stability
(1)(2)
Vref/
T
-
25
C
Ta
+85
C
-
0.3
0.6
mV/
C
OSCILLATOR SECTION
Initial accuracy
F
OSC
KA5H0380R
90
100
110
kHz
Initial accuracy
F
OSC
KA5M0380R
61
67
73
kHz
Initial accuracy
F
OSC
KA5L0380R
45
50
55
kHz
Frequency change with temperature
(2)
-
25
C
Ta
+85
C
-
5
10
%
PWM SECTION
Maximum duty cycle
D
max
KA5H0380R
62
67
72
%
Maximum duty cycle
D
max
KA5M0380R
KA5L0380R
72
77
82
%
FEEDBACK SECTION
Feedback source current
I
FB
Ta=25
C, 0V<V
fb
<3V
0.7
0.9
1.1
mA
Shutdown delay current
I
delay
Ta=25
C, 5V
V
fb
V
SD
4
5
6
A
OVER CURRENT PROTECTION SECTION
Over current protection
I
L(max)
Max. inductor current
1.89
2.15
2.41
A
UVLO SECTION
Start threshold voltage
V
th(H)
-
8.4
9
9.6
V
Minimum operating voltage
V
th(L)
After turn on
14
15
16
V
TOTAL STANDBY CURRENT SECTION
Start current
I
ST
V
CC
=14V
-
0.1
0.17
mA
Operating supply current
(control part only)
I
OPR
V
CC
<28
-
7
12
mA
SHUTDOWN SECTION
Shutdown Feedback voltage
V
SD
V
fb
>6.5V
6.9
7.5
8.1
V
Thermal shutdown temperature (Tj)
(1)
T
SD
-
140
160
-
C
Over voltage protection
V
OVP
V
CC
>24V
25
27
29
V
KA5H0380R/KA5M0380R/KA5L0380R
5
Typical Performance Characteristics
10
0
10
1
10
-1
10
0
10
1
@Notes:
1. 300
s Pulse Test
2. T
C
= 25
o
C
V
GS
Top : 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
Bottom:4.5V
I
D
, D
r
ai
n
C
u
r
r
e
n
t
[A
]
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
-1
10
0
10
1
@ Notes:
1. V
DS
= 30 V
2. 300
s Pulse Test
-25
o
C
25
o
C
150
o
C
I
D
,
D
r
ai
n C
u
rr
ent
[
A
]
V
GS
, Gate-Source Voltage [V]
0.4
0.6
0.8
1.0
0.1
1
10
@ Notes:
1. V
GS
= 0V
2. 300
s Pulse Test
25
o
C
150
o
C
I
DR
,
R
e
v
e
rs
e D
r
ai
n C
u
rrent
[
A
]
V
SD
, Source-Drain Voltage [V]
10
0
10
1
0
100
200
300
400
500
600
700
800
900
1000
C
rss
C
oss
C
iss
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Ca
pa
ci
ta
n
c
e [p
F
]
V
DS
, Drain-Source Voltage [V]
0
5
10
15
20
25
30
0
2
4
6
8
10
@ Note : I
D
=3.0A
V
DS
=640V
V
DS
=400V
V
DS
=160V
V
GS
,
G
a
t
e-S
ourc
e
V
o
l
t
age
[
V
]
Q
G
,Total Gate Charge [nC]
0
1
2
3
4
0
1
2
3
4
5
6
7
8
Vgs=10V
Vgs=20V
@ Note : Tj=25
Fig3. On-Resistance vs. Drain Current
R
DS
(
o
n
)
,
[
]
D
r
a
i
n-
S
o
u
r
c
e
O
n
-
R
es
i
s
t
a
nc
e
I
D
,Drain Current
Figure 1. Output Characteristics
Figure 2. Thansfer Characteristics
Figure 3. On-Resistance vs. Drain Current
Figure 4. Source-Drain Diode Forward Voltage
Figure 5. Capacitance vs. Drain-Source Voltage
Figure 6. Gate Charge vs. Gate-Source Voltage
KA5H0380R/KA5M0380R/KA5L0380R
6
typical performance characteristics (continued)
10
- 5
10
- 4
10
- 3
10
- 2
10
- 1
10
0
10
1
10
- 2
10
- 1
10
0
single pulse
0.2
0.1
0.01
0.02
0.05
D=0.5
@ Notes :
1. Z
J C
(t)=1.25
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
J M
-T
C
=P
D M
*Z
J C
(t)
Z
JC
(t
) ,
T
her
mal
Res
pon
se
t
1
, Square Wave Pulse Duration [sec]
-50
0
50
100
150
0.8
0.9
1.0
1.1
1.2
@ Notes :
1. V
GS
= 0V
2. I
D
= 250
A
T
J
, Junction Temperature [
o
C]
BV
DS
S
,
(
N
o
r
m
a
liz
e
d
)
D
r
ai
n
-
S
our
c
e
B
r
eak
dow
n
V
o
l
t
ag
e
-50
0
50
100
150
0.0
0.5
1.0
1.5
2.0
2.5
R
D
S
(
on)
,
(
N
or
m
a
l
i
z
ed)
D
r
ai
n-
S
our
c
e
O
n
-
R
es
i
s
t
anc
e
T
J
, Junction Temperature [
o
C]
@ Notes:
1. V
GS
= 10V
2. I
D
= 1.5 A
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
100
s
DC
10
s
1 ms
10 ms
@ Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
Operation in This Area
is Limited by R
DS(on)
I
D
, Drai
n Current [
A
]
V
DS
, Drain-Source Voltage [V]
40
60
80
100
120
140
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
I
D
,
D
r
ai
n C
u
r
r
ent
[
A
]
T
C
, Case Temperature [
o
C]
Figure 7. Breakdown Voltage vs. Temperature
Figure 8. On-Resistance vs. Temperature
Figure 9. Max. Safe Operating Area
Figure 10. Max. Drain Current vs. Case Temperature
Figure 11. Thermal Response
KA5H0380R/KA5M0380R/KA5L0380R
7
typical performance characteristics (control part)
(These characteristic graphs are normalized at Ta = 25
C)
Fig.1 Operating Frequency
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25
0
25
50
75
100 125 150
Fosc
Fig.2 Feedback Source Current
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25
0
25
50
75
100 125 150
Ifb
Fig.3 Operating Current
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25
0
25
50
75
100 125 150
Iop
Fig.4 Max Inductor Current
0.8
0.85
0.9
0.95
1
1.05
1.1
-25
0
25
50
75
100 125 150
Ipeak
Fig.5 Start up Current
0.5
0.7
0.9
1.1
1.3
1.5
-25
0
25
50
75
100 125 150
Istart
Fig.6 Start Threshold Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25
0
25
50
75 100 125 150
Vstart
Figure 1. Operating Frequency
Figure 2. Feedback Source Current
Figure 3. Operating Current
Figure 4. Max Inductor Current
Figure 5. Start up Current
Figure 6. Start Threshold Voltage
KA5H0380R/KA5M0380R/KA5L0380R
8
typical performance characteristics (continued)
(These characteristic graphs are normalized at Ta = 25
C)
Fig.7 Stop Threshold Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25
0
25
50
75
100 125 150
Vstop
Fig.8 Maximum Duty Cycle
0.85
0.9
0.95
1
1.05
1.1
1.15
-25
0
25
50
75 100 125 150
Dmax
Fig.9 Vcc Zener Voltage
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25
0
25
50
75
100 125 150
Vz
Fig.10 Shutdown Feedback Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25
0
25
50
75
100 125 150
Vsd
Fig.11 Shutdown Delay Current
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25
0
25
50
75
100 125 150
Idelay
Fig.12 Over Voltage Protection
0.85
0.9
0.95
1
1.05
1.1
1.15
-25
0
25
50
75
100 125 150
Vovp
Figure 7. Stop Threshold Voltage
Figure 8. Maximum Duty Cycle
Figure 9. V
CC
Zener Voltage
Figure 10. Shutdown Feedback Voltage
Figure 11. Shutdown Delay Current
Figure 12. Over Voltage Protection
KA5H0380R/KA5M0380R/KA5L0380R
9
typical performance characteristics (continued)
(These characteristic graphs are normalized at Ta = 25
C)
Figure13. Soft Start Voltage
Figure 14. Drain Source Turn-on Resistance
Fig.13 Soft Start Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25
0
25
50
75
100 125 150
Vss
Fig.14 Drain Source Turn-on
Resistance
0
0.5
1
1.5
2
2.5
-25
0
25
50
75 100 125 150
Rdson
KA5H0380R/KA5M0380R/KA5L0380R
10
Package Dimensions
TO-220F-4L
KA5H0380R/KA5M0380R/KA5L0380R
11
Package Dimensions
(Continued)
TO-220F-4L (Forming)
KA5H0380R/KA5M0380R/KA5L0380R
12
Ordering Information
TU : Non forming Type
YDTU :forming Type
Product Number
Package
Rating
Operating Temperature
KA5H0380R-TU
TO-220F-4L
800V, 3A
-25
C to +85
C
KA5H0380R-YDTU
TO-220F-4L(Forming)
KA5M0380R-TU
TO-220F-4L
800V, 3A
-25
C to +85
C
KA5M0380R-YDTU TO-220F-4L(Forming)
KA5L0380R-TU
TO-220F-4L
800V, 3A
-25
C to +85
C
KA5L0380R-YDTU
TO-220F-4L(Forming)
KA5H0380R/KA5M0380R/KA5L0380R
13
KA5H0380R/KA5M0380R/KA5L0380R
7/24/00 0.0m 001
Stock#DSxxxxxxxx
2000 Fairchild Semiconductor International
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
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